zero resistance中文是什么意思

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中文翻译
造句

零点电阻

zero n. (pl. zeros, zeroes) 1.【数学 ...
resistance n. 1.抵抗，反抗，抗拒，抵御；敌对，抵抗力，反抗力， ...
detector for zero resistance insulator 零值绝缘子检出器
zero mark resistance 零点电阻
zero phase sequence resistance 零相序电阻
zero power resistance 零功率电阻
zero resistance ammeter 零内阻安培计
zero resistance insulator 零值绝缘子,外形完好，但电阻值为零的绝缘子。
zero voltage resistance 零电压电阻; 零压电阻
zero-phase-sequence resistance 零序电阻
zero-power resistance 零功率电阻
at zero 在零度
t-zero n. 〔俄语〕【宇宙空间技术】(人造卫星等的)发射时间。
zero n. (pl. zeros, zeroes) 1.【数学】零；零号。 2.零位；零点，起点；(温度表的)零度，冰点；座标原点；无。 3.最低点；【天文学】天底；【航空】零高度。 4.没价值的人[物]。 5.【军事】＝ zero hour. the absolute zero 【物理学】绝对零度〔－273.16℃〕。 the air zero 原子弹空中爆炸中心。 fly at zero 超低空(1000英尺高度以下的)飞行。 vt. 1.把(调节器等)调整到零位。 2.把…减少到零位。 zero in 1. 调整(枪炮的)射距，把(枪炮等的标尺)调整到标准无风部位瞄准。 2. 把(火力)对准目标 (on)。 zero out 给…以免税待遇(to zero out funding for public broadcasting 对用于公共广播的经费实行免税)。 adj. 1.零(度)的。 2.【气象学】云幕低于50英尺，能见度小于165英尺的。
zero in 观察打全中的最佳位置; 瞄准具校正
zero in on 对……集中火力（注意力）于某事; 瞄准
zero-in 归零校正
are resistance 耐电弧性
of resistance 阻抗
on resistance 导通电阻; 开态电阻
on-resistance 导通电阻
resistance n. 1.抵抗，反抗，抗拒，抵御；敌对，抵抗力，反抗力，阻力，【生物学】抗病性。 2.【电学】电阻；阻抗；电阻器。 electric resistance 电阻。 abrasive resistance 耐磨力[度]。 dead resistance 吸收[消耗，镇流]电阻。 passive resistance 无源电阻；消极抵抗。 a piece of resistance 主要品，压轴，出类拔萃的东西；主菜，压桌菜(＝pièce de résistance)。 make some [no] resistance 进行[不]抵抗。 offer [put up] resistance to [against] 抵抗。 resistance welding 电阻焊接，电焊。 take the line of least resistance 采取阻力最小的路线；采取最省力的方法。
resistance to 抵制的; 对……的抵抗,阻力; 对…的阻力
the resistance 抵抗380
zero zero 零高度零速度的; 零零条件的; 能见度极差

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例句与用法

Has zero resistance when closed
闭合时具有零电阻。
If he defeats them , he ` ll see zero resistance from other , smaller clans
如果他赢了，其它的小部落将会俯首称臣，任其号令。
This quantity delineates the maximum amount of current that a superconductor can carry and still maintain zero resistance
当电流的密度超过临界值时，涡流（样品中没有超导作用的小区域）会开始移动。
The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k . the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure
实验结果表明，用hfcvd法在400原位制备了临界温度为36k的mgb2超导薄膜；用hpcvd法在700原位制备了临界温度为34k的mgb2超导薄膜；将300制备的前驱物b膜在mg蒸气中800保温1h非原位退火，制备了临界温度为37k的mgb2超导薄膜。
The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power , and analyzes the principles of work , merts and shortcomings of these technologies , based on the absorption of these technologies , it designs a 1 . 5v low power rail - to - rail cmos operational amplifier . when designing input stage , in order to enable the input common mode voltage range to achieve rail - to - rail , it does not use the traditional differential input pair , but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure , and uses the proportional current mirror technology to realize the constant transconductance of input stage . in the middle gain stage design , the current mirror load does not use the traditional standard cascode structure , but uses the low voltage , wide - swing casecode structure which is suitable to work in low voltage . when designing output stage , in order to enhance the efficiency , it uses the push - pull common source stage amplifier as the output stage , the output voltage swing basically reached rail - to - rail . the thesis changes the design of the traditional normal source based on the operational amplifier , uses the differential amplifier with current mirror load to design a normal current source . the normal current source provides the stable bias current and the bias voltage to the operational amplifier , so the stability of operational amplifier is guaranteed . the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier
本论文对国内外的模拟低电压低功耗技术做了广泛的调查研究,分析了这些技术的工作原理和优缺点,在吸收这些技术成果基础上设计了一个1 . 5v低功耗轨至轨cmos运算放大器。在设计输入级时,为了使输入共模电压范围达到轨至轨,不是采用传统的差动输入结构,而是采用了nmos管和pmos管并联的互补差动输入对结构,并采用成比例的电流镜技术实现了输入级跨导的恒定;在中间增益级设计中,电流镜负载并不是采用传统的标准共源共栅结构,而是采用了适合在低压工作的低压宽摆幅共源共栅结构;在输出级设计时,为了提高效率,采用了推挽共源级放大器作为输出级,输出电压摆幅基本上达到了轨至轨;本论文改变传统基准源基于运放的设计,采用了带电流镜负载的差分放大器设计了一个基准电流源,给运放提供稳定的偏置电流和偏置电压,保证了运放的稳定性;并采用了带调零电阻的密勒补偿技术对运放进行频率补偿。